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  unisonic technologies co., ltd MMBT1815 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r206-014,f  high frequency npn amplifier transistor features *collector-emitter voltage: bv ceo =50v *collector current up to 150ma *high h fe linearity *complement to mmbt1015 sot-23 3 2 1 3 2 1 sot-523 3 2 1 sot-113 3 2 1 sot-323 *pb-free plating product number: MMBT1815l ordering information order number pin assignment normal lead free plating package 1 2 3 packing MMBT1815-x-ac3-r MMBT1815l-x-ac3-r sot-113 e b c tape reel MMBT1815-x-ae3-r MMBT1815l-x-ae3-r sot-23 e b c tape reel MMBT1815-x-al3-r MMBT1815l-x-al3-r sot-323 e b c tape reel MMBT1815-x-an3-r MMBT1815l-x-an3-r sot-523 e b c tape reel MMBT1815l-x-ac3-r (1)packing type (2)package type (3)rank (4)lead plating (1) r: tape reel (2) ac3: sot-113, ae3: sot-23, al3: sot-323, an 3: sot-523 (3) x: refer to classification of h fe1 (4) l: lead free plating, blank: pb/sn marking c4 lead plating
MMBT1815 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-014,f absolute maximum rating ( ta=25 c , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v sot-23 250 mw collector dissipation (ta=25 c) sot-523/sot-113/sot-323 p c 200 mw collector current i c 150 ma base current i b 50 ma junction temperature t j 150 
storage temperature t stg -55 ~ +150 
note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-emitter saturation voltage v ce(sat) ic = 100ma, i b = 10ma 0.1 0.25 v base-emitter saturation voltage v be(sat) ic = 100ma, i b = 10ma 1.0 v collector cut-off current i cbo v cb = 60v, i e = 0 100 na emitter cut-off current i ebo v eb = 5v, ic = 0 100 na dc current gain h fe1 h fe2 v ce = 6v, ic = 2ma v ce = 6v, ic = 150ma 120 25 700 transition frequency f t v ce = 10v,ic = 50ma 80 mhz output capacitance c ob v cb = 10v, i e = 0, f = 1mhz 2.0 3.0 pf noise figure nf ic = -0.1ma, v ce = 6v r g = 10k ? , f = 100hz 1.0 1.0 db classification of h fe1 rank y gr bl range 120-240 200-400 350-700 
MMBT1815 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-014,f typical characteristics static characteristics collector-emitter voltage ( v) collector current, ic (ma) 04 8 121620 0 20 40 60 80 100 dc current gain collector current, ic (ma) dc curr ent gain, h fe 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 v ce =6v i b =50 a i b =100 a i b =150 a i b =200 a i b =250 a i b =300 a base-emitter on voltage 10 -1 10 0 10 1 10 2 collector current, ic (ma) bas e-emi tter vol tage (v) 0 0. 2 0 .4 0 .6 0. 8 1 .0 v ce =6 v collector current , ic (ma) 10 3 10 2 10 1 10 0 10 -1 saturation voltage (mv) 10 1 10 2 10 3 10 4 saturation v oltage v ce (sat ) v be (sat ) ic=10*i b current gain-bandwidth product collector output capacitance collector current, ic (ma) 10 0 10 1 10 2 10 3 current gain-bandw idth product,f t (mhz) 10 0 10 1 10 2 v ce =6v collector -base voltage (v) capacitance, cob (pf) 10 0 10 1 10 2 10 0 10 1 10 2 10 3 f=1mhz i e =0 10 -1 10 -1 
MMBT1815 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-014,f                                                 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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